We study the effect of spatial disorder and anisotropy on the mobility of c
harge carriers using a dynamical Monte Carlo simulation. Our transfer rate
is based on a polaronic model of phonon-assisted hopping in an effective di
abatic potential. Even without the consideration of anisotropic charge loca
lisations and different coupling constants in different space co-ordinates,
as expected for semiconducting polymers, we find distinct effects of disor
der and anisotropy on the mobility depending on the external electrical fie
ld. This makes generalisations of simulational data and the interpretation
of fitting parameters for disorder and anisotropy to experiments rather com
plicated. A detailed topological knowledge of measured samples is of paramo
unt importance for a comparison of simulational and experimental results. (
C) 2000 Elsevier Science S.A. All rights reserved.