Dynamic Monte Carlo simulation of organic molecular beam deposition: influence of growth parameters on film morphology

Citation
J. Stephan et L. Brehmer, Dynamic Monte Carlo simulation of organic molecular beam deposition: influence of growth parameters on film morphology, SYNTH METAL, 109(1-3), 2000, pp. 333-336
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
109
Issue
1-3
Year of publication
2000
Pages
333 - 336
Database
ISI
SICI code
0379-6779(20000301)109:1-3<333:DMCSOO>2.0.ZU;2-#
Abstract
Using a dynamical Monte Carlo (MC) simulation technique, we describe the gr owth of physisorbed organic molecules on a clean substrate under ultra-high vacuum conditions in terms of a simple lattice gas model. Our main process es under consideration are deposition and diffusion. We clarify the experim entally observed influence of deposition rate changes on film morphology an d suggest that the source temperature is a better parameter to describe the growth process. Interlayer processes are decisive when molecules possess p ermanent dipole moments. They lead to varying barrier heights and can be ut ilised to control the film morphology with lateral electrical fields in sit u. This effect is discussed as well. (C) 2000 Elsevier Science S.A. All rig hts reserved.