Experimental study of the parametric interaction between space-charge waves in thin-film GaAs-based semiconductor structures

Authors
Citation
Ai. Mikhailov, Experimental study of the parametric interaction between space-charge waves in thin-film GaAs-based semiconductor structures, TECH PHYS L, 26(3), 2000, pp. 217-219
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
3
Year of publication
2000
Pages
217 - 219
Database
ISI
SICI code
1063-7850(2000)26:3<217:ESOTPI>2.0.ZU;2-L
Abstract
An experiment on the effect of low-frequency pumping on the output spectrum of a thin-film n-GaAs semiconductor structure with electron drift is repor ted in the 3-cm and 8-mm wavelength intervals. It is found that the presenc e of a low-frequency pump signal, whose power greatly exceeds that of a tes t signal, considerably enhances microwave transfer within two frequency ban ds separated by Delta f = f(s) - f(p) , where f(s) is the frequency of a we ak test signal and f(p) is the frequency of the pump signal (f(p) < f(s)). The transfer enhancement is evidence of the existence of effective parametr ic coupling between space-charge waves in the drift electron stream. This e ffect confirms the conclusions of previous theoretic studies. (C) 2000 MAIK "Nauka / Interperiodica".