Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy

Authors
Egorov, VA Tsyrlin, GE
Citation
Va. Egorov et Ge. Tsyrlin, Numerical simulation of some peculiarities of the formation of multilayer structures with quantum dots by means of molecular beam epitaxy, TECH PHYS L, 26(3), 2000, pp. 220-222
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
3
Year of publication
2000
Pages
220 - 222
Database
ISI
SICI code
1063-7850(2000)26:3<220:NSOSPO>2.0.ZU;2-1
Abstract
Some peculiarities of the growth of nanoislands in multilayer heteroepitaxi al stressed systems are studied numerically based on the theory of elastic interaction. Different scenarios of the behavior of the system of verticall y coupled islands and the intervals, separating these scenarios, are determ ined for the case of heteroepitaxial growth of multilayer systems. (C) 2000 MAIK "Nauka / Interperiodica".