Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds

Authors
Golikova, EG Gorbylev, VA Davidyuk, NY Kureshov, VA Leshko, AY Lyutetskii, AV Pikhtin, NA Ryaboshtan, YA Simakov, VA Tarasov, IS Fetisova, NV
Citation
Eg. Golikova et al., Separately bounded InGaAsP high-power laser heterostructures obtained by VPE of organometallic compounds, TECH PHYS L, 26(3), 2000, pp. 225-227
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
3
Year of publication
2000
Pages
225 - 227
Database
ISI
SICI code
1063-7850(2000)26:3<225:SBIHLH>2.0.ZU;2-W
Abstract
InGaAsP/InP laser heterostructures with two stressed quantum wells operatin g in the wavelength range 1.3-1.55 mu m were obtained by VPE of organometal lic compounds. An optical emission power of 2.4 W was reached for the laser diodes with 100-mu m wide strips operated in the continuous lasing mode at 20 degrees C. A minimum threshold current density was 260 A/cm(2) . A diff erential quantum efficiency eta(d) = 40% was obtained with a 1.9-mm-long Fa bry-Perot resonator. The internal optical losses of the heterostructures ar e reduced to 2.6-4.2 cm(-1). (C) 2000 MAIK "Nauka / Interperiodica".