PHOTOREFLECTANCE STUDY OF ETCHING AND ANNEALING EFFECT ON ALGAAS GAASHETEROSTRUCTURE/

Authors
HWANG I KIM JE PARK HY NOH SK
Citation
I. Hwang et al., PHOTOREFLECTANCE STUDY OF ETCHING AND ANNEALING EFFECT ON ALGAAS GAASHETEROSTRUCTURE/, Solid state communications, 103(1), 1997, pp. 1-3
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
103
Issue
1
Year of publication
1997
Pages
1 - 3
Database
ISI
SICI code
0038-1098(1997)103:1<1:PSOEAA>2.0.ZU;2-8
Abstract
We investigated the PR spectra of as-grown, annealed and etched modula tion-doped AlGaAs/GaAs heterostructure samples. As annealing time incr eases, the built-in electric fields are strengthened as a result of th e diffusion of Si-Si pairs. As the etching time increases the broad si gnal near GaAs band-gap energy and the single peak shape (SPS) signal near AlGaAs band-gap energy change to the step-like signal and the dou ble peak shape (DPS) signal, respectively. (C) 1997 Elsevier Science L td.