Lh. Tjeng et al., DEVELOPMENT OF THE ELECTRONIC-STRUCTURE IN A K-DOPED C-60 MONOLAYER ON A AG(111) SURFACE, Solid state communications, 103(1), 1997, pp. 31-35
We present an electron spectroscopy study of the development of the el
ectronic structure in the K-doped C-60 monolayer on a Ag(1 1 1) surfac
e. We find that the occupation of the lowest unoccupied molecular orbi
tal (LUMO) of the C-60 can be varied continuously from 0.75 (undoped)
to 6.0 (fully doped). We also find that the density of states at the F
ermi level for a doping level corresponding to 3 electrons per C-60 is
at least a factor of two higher than that found from photoemission on
bulk K3C60. This enhanced density of states at the Fermi level might
suggest an increased superconducting transition temperature for the mo
nolayer system. (C) 1997 Elsevier Science Ltd.