DEVELOPMENT OF THE ELECTRONIC-STRUCTURE IN A K-DOPED C-60 MONOLAYER ON A AG(111) SURFACE

Citation
Lh. Tjeng et al., DEVELOPMENT OF THE ELECTRONIC-STRUCTURE IN A K-DOPED C-60 MONOLAYER ON A AG(111) SURFACE, Solid state communications, 103(1), 1997, pp. 31-35
Citations number
37
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
00381098
Volume
103
Issue
1
Year of publication
1997
Pages
31 - 35
Database
ISI
SICI code
0038-1098(1997)103:1<31:DOTEIA>2.0.ZU;2-5
Abstract
We present an electron spectroscopy study of the development of the el ectronic structure in the K-doped C-60 monolayer on a Ag(1 1 1) surfac e. We find that the occupation of the lowest unoccupied molecular orbi tal (LUMO) of the C-60 can be varied continuously from 0.75 (undoped) to 6.0 (fully doped). We also find that the density of states at the F ermi level for a doping level corresponding to 3 electrons per C-60 is at least a factor of two higher than that found from photoemission on bulk K3C60. This enhanced density of states at the Fermi level might suggest an increased superconducting transition temperature for the mo nolayer system. (C) 1997 Elsevier Science Ltd.