POTENTIAL-INSERTED INGAAS-ALGAINAS SHALLOW QUANTUM-WELLS FOR ELECTROOPTICAL MODULATION AT 1.55 MU-M

Authors
GUETTLER T KREBS O DIAS IL HARMAND JC DEVAUX F VOISIN P
Citation
T. Guettler et al., POTENTIAL-INSERTED INGAAS-ALGAINAS SHALLOW QUANTUM-WELLS FOR ELECTROOPTICAL MODULATION AT 1.55 MU-M, Semiconductor science and technology, 12(6), 1997, pp. 729-732
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
12
Issue
6
Year of publication
1997
Pages
729 - 732
Database
ISI
SICI code
0268-1242(1997)12:6<729:PISQFE>2.0.ZU;2-A
Abstract
We show that the insertion of ultra thin layers of barrier material in InGaAs quantum wells allows separate control of the working wavelengt h, barrier height and quantum well thickness in InGaAs-AlGalnAs quantu m well electroabsorption modulators, resulting in a drastic improvemen t of the overall performances of these devices.