Electrocrystallization of CdSe upon various substrates. Structural arrangement and photoelectrochemical performance

Citation
M. Bouroushian et al., Electrocrystallization of CdSe upon various substrates. Structural arrangement and photoelectrochemical performance, APPL SURF S, 156(1-4), 2000, pp. 125-134
Citations number
23
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
156
Issue
1-4
Year of publication
2000
Pages
125 - 134
Database
ISI
SICI code
0169-4332(200002)156:1-4<125:EOCUVS>2.0.ZU;2-3
Abstract
The growth of cadmium chalcogenide thin film semiconductors, in the context of a typical electrolytic method of formation with an aqueous bath, is to a large extent determined by the deposition substrate, together with the po tential, for a given electrolyte composition and temperature. The effect of various substrates ([100]-oriented Ni, commercially pure Ni, Ti) and proce dures (Ni electropolishing, Ti anodization, double-step deposition, etc.) o n the structural arrangement and the resulting photoelectrochemical (PE) be havior of cathodically electroplated CdSe layers is presented. The outcome of the preparation process is analyzed in terms of structural-optical prope rties relation. As verified, some microcrystalline, porous samples give hig her PE efficiencies than larger-grained ones, owing to the increased contac t area with the PE redox electrolyte and possibly the establishment of a pa rticular charge transfer mechanism in the solid. The latter is associated w ith the existence of a nanostructure. (C) 2000 Elsevier Science B.V. All ri ghts reserved.