Optical characterisation of pulsed laser deposited SiC films

Authors
Schlaf, M Sands, D Key, PH
Citation
M. Schlaf et al., Optical characterisation of pulsed laser deposited SiC films, APPL SURF S, 154, 2000, pp. 83-88
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
154
Year of publication
2000
Pages
83 - 88
Database
ISI
SICI code
0169-4332(200002)154:<83:OCOPLD>2.0.ZU;2-0
Abstract
Thin films of SiC were deposited by pulsed laser deposition on silicon and fused silica substrates at room temperature and 1125 K. The films were anal ysed by infrared reflection absorption spectroscopy (IRRAS) and the resulti ng spectra were characterised with a model to determine the film thickness and the crystal quality which is higher for the film deposited at 1125 K. T he data obtained from UV/vis transmission spectroscopy were used to determi ne the optical bandgap (E-optical = 1.3 eV). (C) 2000 Elsevier Science B.V. All rights reserved.