In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices

Authors
Patsalas, P Charitidis, C Logothetidis, S
Citation
P. Patsalas et al., In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices, APPL SURF S, 154, 2000, pp. 256-262
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
154
Year of publication
2000
Pages
256 - 262
Database
ISI
SICI code
0169-4332(200002)154:<256:ISAREM>2.0.ZU;2-A
Abstract
We fabricated Al/TiNx/(Ti/Si) x 15/Si(100) submicron devices by magnetron s puttering. Spectroscopic Ellipsometry (SE) was used for in situ characteriz ation of TIN,, Ti and Si layers. The intermixing of Ti/Si layers and the ph ase transformations of TiSi during annealing were monitored by Kinetic Elli psometry (KE). The metallic behavior of the TiNx layers was studied by anal yzing their dielectric function in the IR region, measured by Fourier Trans form InfraRed Spectroscopic Ellipsometry (FTIRSE), and by the unscreened pl asma energy ((h) over bar omega(pu)) calculated by SE data analysis. (C) 20 00 Elsevier Science B.V. All rights reserved.