P. Patsalas et al., In situ and real-time ellipsometry monitoring of submicron titanium nitride/titanium silicide electronic devices, APPL SURF S, 154, 2000, pp. 256-262
We fabricated Al/TiNx/(Ti/Si) x 15/Si(100) submicron devices by magnetron s
puttering. Spectroscopic Ellipsometry (SE) was used for in situ characteriz
ation of TIN,, Ti and Si layers. The intermixing of Ti/Si layers and the ph
ase transformations of TiSi during annealing were monitored by Kinetic Elli
psometry (KE). The metallic behavior of the TiNx layers was studied by anal
yzing their dielectric function in the IR region, measured by Fourier Trans
form InfraRed Spectroscopic Ellipsometry (FTIRSE), and by the unscreened pl
asma energy ((h) over bar omega(pu)) calculated by SE data analysis. (C) 20
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