IR-RTI oscillations during laser induced epitaxial GaN film growth and therole of free carrier concentration

Authors
Huttner, B Gross, M Rupp, T Schroder, H
Citation
B. Huttner et al., IR-RTI oscillations during laser induced epitaxial GaN film growth and therole of free carrier concentration, APPL SURF S, 154, 2000, pp. 263-268
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
154
Year of publication
2000
Pages
263 - 268
Database
ISI
SICI code
0169-4332(200002)154:<263:IODLIE>2.0.ZU;2-K
Abstract
In this paper, we report on the growth of high quality GaN films by a laser assisted process, optimized for the growth of epitaxial nitrides. Growth m ode and film thickness were controlled in situ by the measurement of infrar ed-radiation transmission intensity (IR-RTI) oscillations. In the case of a light absorbing film, these oscillations are damped. A model is presented to fit the experimental data and to determine the free carrier concentratio n during deposition. Comparison with room temperature (RT) values from Hall measurements showed a satisfying agreement. (C) 2000 Elsevier Science B.V. All rights reserved.