Transparent, conductive ZnO films were deposited by pulsed laser deposition
(PLD) using 790-nm, 130-fs laser pulses. An optical transmittance as high
as 88% in the visible region was obtained when deposited above 150 degrees
C. The electrical resistivity of the films was 10(-1) to 10(-3) Omega cm be
tween room temperature and 270 degrees C. Sharp X-ray diffraction (XRD) pea
ks were observed for films deposited above 150 degrees C on both quartz and
Si. The results were obtained in absence of oxygen gas during the depositi
on, unlike in previous PLD where nanosecond laser pulses were used. (C) 200
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