Pulsed laser deposition of ZnO thin films using a femtosecond laser

Citation
M. Okoshi et al., Pulsed laser deposition of ZnO thin films using a femtosecond laser, APPL SURF S, 154, 2000, pp. 424-427
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
154
Year of publication
2000
Pages
424 - 427
Database
ISI
SICI code
0169-4332(200002)154:<424:PLDOZT>2.0.ZU;2-Y
Abstract
Transparent, conductive ZnO films were deposited by pulsed laser deposition (PLD) using 790-nm, 130-fs laser pulses. An optical transmittance as high as 88% in the visible region was obtained when deposited above 150 degrees C. The electrical resistivity of the films was 10(-1) to 10(-3) Omega cm be tween room temperature and 270 degrees C. Sharp X-ray diffraction (XRD) pea ks were observed for films deposited above 150 degrees C on both quartz and Si. The results were obtained in absence of oxygen gas during the depositi on, unlike in previous PLD where nanosecond laser pulses were used. (C) 200 0 Elsevier Science B.V. All rights reserved.