Pulsed laser deposition and characterization of PZT thin films

Citation
P. Verardi et al., Pulsed laser deposition and characterization of PZT thin films, APPL SURF S, 154, 2000, pp. 514-518
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
154
Year of publication
2000
Pages
514 - 518
Database
ISI
SICI code
0169-4332(200002)154:<514:PLDACO>2.0.ZU;2-5
Abstract
Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were deposited on TiN coated Si substr ates. PZT and TiN layers were grown by two subsequent laser ablation proces ses in oxygen and, respectively, nitrogen reactive atmosphere. Both deposit ion processes were conducted at quite low substrate temperature: 350 degree s C for TIN and 375 degrees C for PZT in the same experimental setup (Nd-YA G laser, lambda = 1.06 mu m, energy/pulse 0.3 J, t(FWHM) = 10 ns), The TIN electrode and PZT films were crystalline as revealed by XRD. The orientatio n of the PZT films was mainly (111) with about 30% component of (002) cryst allographic phase. The high frequency optical vibrational modes of the ferr oelectric PZT structure have been obtained from FTIR measurements. A mappin g of the d(33) piezoelectric constant was obtained. Polarization hysteresis cycles of the samples were measured and high values of the remanent polari zation and coercive electric field were obtained for all the samples. (C) 2 000 Published by Elsevier Science B.V. All rights reserved.