Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were deposited on TiN coated Si substr
ates. PZT and TiN layers were grown by two subsequent laser ablation proces
ses in oxygen and, respectively, nitrogen reactive atmosphere. Both deposit
ion processes were conducted at quite low substrate temperature: 350 degree
s C for TIN and 375 degrees C for PZT in the same experimental setup (Nd-YA
G laser, lambda = 1.06 mu m, energy/pulse 0.3 J, t(FWHM) = 10 ns), The TIN
electrode and PZT films were crystalline as revealed by XRD. The orientatio
n of the PZT films was mainly (111) with about 30% component of (002) cryst
allographic phase. The high frequency optical vibrational modes of the ferr
oelectric PZT structure have been obtained from FTIR measurements. A mappin
g of the d(33) piezoelectric constant was obtained. Polarization hysteresis
cycles of the samples were measured and high values of the remanent polari
zation and coercive electric field were obtained for all the samples. (C) 2
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