The patterning of thin and thick films (100 nm-2 mu m) is performed with ex
cimer laser radiation (lambda = 248 nm, tau = 20 ns, epsilon(max) = 5 J/cm(
2)). The laser ablation is investigated for the film systems: Fe0.6Co0.4/Si
O2-multilayers, Tb0.4Fe0.6/Fe0.5Co0.5 multilayers and SiNy-layers. The abla
tion process strongly depends on the film material, film thickness, as well
as on the laser parameters such as laser fluence and number of pulses. The
influence of using a beam homogenizer on the ablation process is discussed
. For applications in microsystem technology, the minimal attainable struct
ure sizes and an appropriate choice of laser parameters are determined. The
patterning of SiNy-layers for application in solar cells is investigated.
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