Jj. Yu et Yf. Lu, Effects of rapid thermal annealing on ripple growth in excimer laser-irradiated silicon-dioxide/silicon substrates, APPL SURF S, 154, 2000, pp. 670-674
Rapid thermal processing is reported to be capable of improving film proper
ties. In this study, the effects of rapid thermal annealing (RTA) on rapid-
thermal-annealed radio-frequency-sputtered silicon oxide films and hence on
excimer laser-induced ripple structures at the silicon dioxide/silicon int
erface are investigated. It is found that the RTA of the oxide film by incr
easing either annealing temperature or annealing time can enhance the rippl
e growth, but does not change the topography of ripple structure. The ellip
sometric measurements indicate that the optical constants of the film, and
hence the calculated film density increase with increasing either annealing
temperature or annealing time. The increase in film density is balanced by
the decrease in the corresponding film thickness. Our analytical model pre
dicts that the increase in ripple period is a result of enhanced energy abs
orption caused by the decrease in equivalent reflectivity of SiO2/Si after
RTA. The calculation is identified to be consistent with the experiment. (C
) 2000 Elsevier Science B.V. All rights reserved.