We present the results of transmission electron microscopy (TEM) and electr
on energy loss spectrometry (EELS) studies on two carbon-boron alloys both
prepared by chemical vapour deposition at ca. 1000 degrees C and differing
in their [Boron]/[Carbon] atomic ratio as well as in their morphology. In b
oth samples, impurity concentrations, principally oxygen and nitrogen, were
found to be low relative to boron dopant levels, For low boron contents, t
ypically around 5-10 at.%, the sample consisted of union-like spherical par
ticles approximately 10 nm in diameter which exhibited a non-homogeneous di
stribution of boron, concentrated at a level of 5-6 at.% in the centre. For
this sample, studies of the B-K- and C-K-ELNES (electron energy loss near-
edge structure) together with associated modelling of the unoccupied densit
y of electronic states, indicate a substitution of boron atoms on threefold
coordinated spl-sites within the graphite network. For higher boron doping
levels, typically 25 at.%, the sample consisted of homogeneous thin films.
In this case, the change in shape of the B-K-ELNES indicates that boron ha
s higher coordinations than planar trigonal together with possibly some res
idual sp(2) sites. This study unambiguously demonstrates the presence of bo
ron substitution solely within an sp(2)-bonded graphite network in the case
of low boron contents and, when combined with other studies, gives an indi
cation of the solubility limit for boron in graphite for the chemical vapou
r deposition (CVD) process. (C) 2000 Elsevier Science Ltd. All rights reser
ved.