Influence of dissolved oxygen on intensity modulated photocurrent spectroscopy (IMPS) at a silicon-hydrofluoric acid interface

Citation
Yh. Ogata et al., Influence of dissolved oxygen on intensity modulated photocurrent spectroscopy (IMPS) at a silicon-hydrofluoric acid interface, ELECTR ACT, 45(14), 2000, pp. 2219-2225
Citations number
21
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
45
Issue
14
Year of publication
2000
Pages
2219 - 2225
Database
ISI
SICI code
0013-4686(2000)45:14<2219:IODOOI>2.0.ZU;2-X
Abstract
The kinetic parameters of the cathodic reaction in a silicon-hydrofluoric a cid system were measured using intensity modulated photocurrent spectroscop y (IMPS). The values and the potential dependences of the measured paramete rs were found to depend upon the concentration of dissolved oxygen. This is one of the reasons why photoelectrochemical measurements in this system ha ve sometimes given poorly reproducible results. The effects of the presence of dissolved oxygen are discussed by considering the surface states and th e relative energy levels of redox potentials in solution. (C) 2000 Elsevier Science Ltd. All rights reserved.