Low-threshold oxide-confined 1.3-mu m quantum-dot laser

Authors
Par, G Shchekin, OB Huffaker, DL Deppe, DG
Citation
G. Par et al., Low-threshold oxide-confined 1.3-mu m quantum-dot laser, IEEE PHOTON, 12(3), 2000, pp. 230-232
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
3
Year of publication
2000
Pages
230 - 232
Database
ISI
SICI code
1041-1135(200003)12:3<230:LO1MQL>2.0.ZU;2-J
Abstract
Data are presented on low threshold, 1.3-mu m oxide-confined InGaAs-GaAs qu antum dot lasers. A very low continuous-wave threshold current of 1.2 mA wi th a threshold current density of 28 A/cm(2) is achieved with pup mounting at room temperature, For slightly larger devices the continuous-wave thresh old current density is as low as 19 A/cm(2).