1.3-mu m GaInNAs-AlGaAs distributed feedback lasers

Room temperature continuous-wave operation of 1.3-mu m single-mode GaInNAs- AlGaAs distributed feedback (DFB)-lasers has been realized, The laser struc ture has been grown by solid source molecular beam epitaxy (MBE) using an e lectron cyclotron resonance plasma source for nitrogen activation (ECR-MBE) . Laterally to the laser ridge a metal grating is patterned in order to obt ain DFB, The evanescent field of the laser mode couples to the grating resu lting in single-mode DFB emission. The continuous wave threshold currents a re around 120 mA for a cavity with 800-mu m length and 2 mu m width, Monomo de emission with side-mode suppression ratios of nearly 40 dB have been obt ained.