Dependence of the light-current characteristics of 1.55-mu m broad-area lasers on different p-doping profiles

We have investigated the dependence of the light-current characteristics of broad-area lasers with different p-doping profiles for a two-step separate -confinement heterostructure (SCH) 1.55-mu m InGaAs-InP laser. A sizable in crease of the optical output power is observed in a structure with delta do ping at the heterointerfaces and moderate doping in the thick SCH layer. It is also shown that the characteristic temperature (T-o) of the structure w ith delta doping at the heterointerfaces and moderate doping at the thick S CH layer is almost constant as the measurement temperature is increased. Su ch an improvement in device performance is attributed to a reduction of car rier leakage to the SCH layer.