Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique

Authors
Qiu, BC Qian, YH Kowalski, OP Bryce, AC Aitchison, JS De la Rue, RM Marsh, JH Owen, M White, IH Penty, RV Franzen, A Hunter, DK Andonovic, I
Citation
Bc. Qiu et al., Fabrication of 2 x 2 crosspoint switches using a sputtered SiO2 intermixing technique, IEEE PHOTON, 12(3), 2000, pp. 287-289
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
12
Issue
3
Year of publication
2000
Pages
287 - 289
Database
ISI
SICI code
1041-1135(200003)12:3<287:FO2X2C>2.0.ZU;2-K
Abstract
We report the fabrication of a 2 x 2 crosspoint switch, which monolithicall y integrates passive waveguides and electroabsorption modulators on one chi p, using the sputtered SiO2 technique for quantum-well intermixing. The sta tic performance of the modulators has been tested, and a modulation depth o f 25 dB has been obtained at a wavelength of 1.55 mu m for an applied bias of 2 V.