Characteristics of high deposition rate pin diodes from pure SiH4 and 10% dilution of SiH4 in H-2

In this paper, we present the results of the electrical characterization of PIN diodes up to 18 mu m thick fabricated on high deposition rates a-Si : H layers obtained from pure SiH4 and from a 10% dilution of SiH4 in H-2, us ing a 13.56 MHz plasma enhanced chemical vapor deposition (PECVD) with geom etrical modifications in the plasma reactor, I-V and I-T curves were invest igated, concluding that the changes introduced in the deposition reactor to increase the deposition rate did not affect the characteristics of the fab ricated diodes. Results are compared with characteristics, reported for dio des obtained by standard and other high deposition late methods.