Formation mechanism of InxGa1-xAs bridge layers on patterned GaAs substrates

The formation mechanism of InxGa1-xAs (x = 0.06) bridge layers on patterned GaAs (1 1 1)B substrates using liquid-phase epitaxy has been investigated. For this (i) the effect of density gradient in the solution on the formati on of bridge layer and (ii) growth of bridge layer on [1 1 0] line-seed-sub strates were studied. The convection induced by destabilizing density gradi ent in the solution led to an increase of lateral growth rate of the InGaAs bridge layers on a substrate mounted on the upper portion of the solution. However. it did not have any significant effect on the formation of the br idge layers. The formation of bridge layer on [1 1 0] line-seed-substrate t ook place only for the {1 1 1}B growth fronts. which indicated that "Berg e ffect" is responsible for the formation of bridge layers. (C) 2000 Elsevier Science B.V. All rights reserved.