Effect of gallium incorporation on the physical properties of ZnO films grown by spray pyrolysis

Gallium-doped zinc oxide thin films were deposited by the spray pyrolysis t echnique onto Coming 7059 glass substrates at a temperature of 350 degrees C using a precursor solution of zinc acetate in isopropyl alcohol. The film s were prepared using different gallium concentrations keeping the other de position parameters such as air and solution Row rates and solution concent ration constant. The variations of the structural. electrical and optical p roperties with the doping concentration were investigated. X-ray diffractio n data showed that the films were polycrystalline with the (0 0 2) preferre d orientation. The textur e coefficient and grain size were evaluated for d ifferent doping concentrations. The films with 5.0 at % gallium had a resis tivity of 1.5 x 10(-3) Ohm cm and a transmittance of 85% with an energy ban d gap of 3.35 eV. (C) 2000 Elsevier Science B.V. All rights reserved.