Characterization and growth of ZnSTe epilayers by hot-wall epitaxy

ZnS1-xTex epilayers were grown on GaAs(1 0 0) substrates by hot-wall epitax y in a wide range of Te composition. The Te composition was determined by R utherford backscattering spectrometry and the lattice constant was measured by double-crystal rocking curve. It was found that the lattice of the epil ayer matches well with that of the substrate at x = 0.37 as expected by Veg ard's rule, and the energy gap was also determined as a function of Te comp osition by spectrophotometer. It showed that a quadratic relation with the composition: E-g(x) = 3.71 - 5.27x + 3.83x(2). Photoluminescence characteri stics were also studied. (C) 2000 Elsevier Science B.V. All rights reserved .