Growth of SiC nanorods prepared by carbon nanotubes-confined reaction

Authors
Tang, CC Fan, SS Dang, HY Zhao, JH Zhang, C Li, P Gu, Q
Citation
Cc. Tang et al., Growth of SiC nanorods prepared by carbon nanotubes-confined reaction, J CRYST GR, 210(4), 2000, pp. 595-599
Citations number
11
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
210
Issue
4
Year of publication
2000
Pages
595 - 599
Database
ISI
SICI code
0022-0248(200003)210:4<595:GOSNPB>2.0.ZU;2-N
Abstract
SiC nanorods have been synthesized by means of the carbon nanotubes-confine d reaction between SiO gas and carbon nanotubes. The diameters of SiC nanor ods can be controlled by the local partial pressure of the CO gas produced during reaction. The morphology of SiC nanorods depends on the shape of the carbon nanotubes at high reaction temperatures. The growth mechanism of SI C nanorods is basically a shape memory synthesis. (C) 2000 Elsevier Science B.V. All rights reserved.