Homoepitaxial growth of 6H-SiC thin films by metal-organic chemical vapor deposition using bis-trimethylsilymethane precursor

Homoepitaxial silicon carbide (SiC) films were grown on 3.5 degrees off-ori ented (0 0 0 1) 6H-SiC by metal-organic chemical vapor deposition (MOCVD) u sing bis-trimethylsilylmethane (BTMSM, C7H20Si2). A pronounced effect of th e growth conditions such as source flow rate and growth temperature on the polytype formation and structural imperfection of the epilayer was observed . The growth behavior was explained by a step controlled epitaxy model. It was demonstrated by high-resolution X-ray diffractometry and transmission e lectron microscopy that high-quality 6H-SiC thin films were successfully gr own at the optimized growth condition of substrate temperature 1440 degrees C with the carrier gas flow rate of 10 sccm. (C) 2000 Elsevier Science B.V . All rights reserved.