High-frequency hopping conductivity and permittivity in compensated semiconductors

Authors
Citation
Vd. Kagan, High-frequency hopping conductivity and permittivity in compensated semiconductors, J EXP TH PH, 90(2), 2000, pp. 400-403
Citations number
4
Categorie Soggetti
Physics
Journal title
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
ISSN journal
10637761 → ACNP
Volume
90
Issue
2
Year of publication
2000
Pages
400 - 403
Database
ISI
SICI code
1063-7761(2000)90:2<400:HHCAPI>2.0.ZU;2-0
Abstract
In semiconductors, high-frequency conductivity is caused by polarization re versal of the collective states of a pair of impurity atoms under the actio n of the random electric fields of all the impurities. A Coulomb correlatio n which appreciably increases the conductivity is established as a result o f the statistical distribution of the particles over four levels of the dia tomic system. The relaxation absorption and the permittivity of the entire pair system are calculated allowing for these statistics. (C) 2000 MAIK "Na uka/ Interperiodica".