Forbidden optical transitions between impurity levels in silicon and gallium phosphide

Authors
Pokrovskii, YE Smirnova, OI Khval'kovskii, NA
Citation
Ye. Pokrovskii et al., Forbidden optical transitions between impurity levels in silicon and gallium phosphide, J EXP TH PH, 90(2), 2000, pp. 404-406
Citations number
11
Categorie Soggetti
Physics
Journal title
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS
ISSN journal
10637761 → ACNP
Volume
90
Issue
2
Year of publication
2000
Pages
404 - 406
Database
ISI
SICI code
1063-7761(2000)90:2<404:FOTBIL>2.0.ZU;2-T
Abstract
Experimental estimates are made of absorption cross sections for forbidden optical transitions from the ground state to long-lived excited states of P , As, Sb, In, and Ga impurities in silicon and Te impurities in gallium pho sphide. The results can be used to predict the possibility of long-waveleng th stimulated emission being excited as a result of the population inversio n of long-lived impurity states in these materials. (C) 2000 MAIK "Nauka/In terperiodica".