Supercurrent induced by injection at V = Delta/e in a three-terminal superconductor-semiconductor device

Citation
R. Taboryski et al., Supercurrent induced by injection at V = Delta/e in a three-terminal superconductor-semiconductor device, J L TEMP PH, 118(5-6), 2000, pp. 663-669
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF LOW TEMPERATURE PHYSICS
ISSN journal
00222291 → ACNP
Volume
118
Issue
5-6
Year of publication
2000
Pages
663 - 669
Database
ISI
SICI code
0022-2291(200003)118:5-6<663:SIBIAV>2.0.ZU;2-T
Abstract
We report on injection induced enhancement of the supercurrent in a mesosco pic three terminal superconductor semiconductor device. The samples consist ed of three superconducting Aluminium electrodes to the same piece of highl y doped and degenerate n-GaAs semiconductor. At the base temperature of the experiment (240mK) the DC Josephson current across two of the superconduct ing electrodes had a maximum for zero injection current from the third elec trode. However, when a finite injection current was passed from the third A l electrode at the injection bias V = Delta(T)/e, a second maximum in criti cal supercurrent was observed. This second maximum persisted to temperature s where the non-injection supercurrent had vanished.