Growth of a high quality ZnO film on sapphire by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers

Hexagonal ZnO films have been grown on a sapphire(0001) substrate by atmosp heric pressure halide vapor phase epitaxy using ZnO buffer layers. The full width at half maximum of the X-ray (0002) diffraction peak for the ZnO fil ms with the buffer layer was found to be smaller than that of the ZnO films without the buffer layer. Reflection high-energy electron diffraction meas urements of the former revealed a diffraction pattern similar to that of a single crystal. The photoluminescence spectra showed a strong peak at 370 n m up to 180 K.