Shallow electron traps induced by [Ru(CN)(6)](4-) in AgCl microcrystals: acomputer simulation study of transient microwave photoconductivity

The transient microwave photoconductivity of AgCl microcrystals homogeneous ly doped with [Ru(CN)(6)](4-) was investigated as a function of the exposur e intensity and doping level at 120 K. Models involving deep electron and/o r hole trapping cannot explain the experimentally observed strong increase of the signal response time and the decrease of the signal height with the doping level. A new model including both intrinsic centres and [Ru(CN)(6)]( 4-) associated shallow electron traps was proposed and studied intensively with me aid of a newly developed computer simulation program. General concl usions from the model study have been summarized. With this model the effec t of [Ru(CN)(6)](4-) on both the signal height and response time can be suc cessfully simulated.