The effective mass and Lande factor of the degenerate electron gas

We study the effective mass and the Lande factor for the three-dimensional as well as the two-dimensional degenerate electron gas. The influences of s pecific approximations to the self-energy and the vertex, equivalently form ulated in terms of static and local effective interactions, are examined, w ith the aim of developing a legitimate and straightforward description of r ealistic low-dimensional semiconductor structures. The results obtained are tested against reference data from the literature. We further apply the fo rmalism to a Si-SiO2 metal oxide-semiconductor (MOS) structure and compare the predictions with experiment.