Carrier mobility in liquid semiconductors

In high temperature liquid alloy semiconductors, the electronic conductivit y (a) is usually in the range 5-500 Ohm(-1) cm(-1). Several workers have lo ng argued that, since such values are lower than those predicted by the 'Mo oij' limit or the Ioffe-Regel criterion (k(F)l > 1), the carriers in such s ystems are either localized or on the threshold of localization, i.e. they are characterized by a low mobility. There are no direct ways to measure th e mobility of current carriers in high temperature liquids bur we shall sho w that, with reasonable assumptions, reliable estimates of the mobility can be made by combining electron transport and magnetic susceptibility data. Our conclusions will challenge the idea that the apparent metal to non-meta l transition observed in liquid alloy semiconductors is related to disorder induced localization.