Metal-semiconductor transition in liquid-alkali-Te mixtures: ab initio molecular-dynamics simulations

Citation
K. Hoshino et al., Metal-semiconductor transition in liquid-alkali-Te mixtures: ab initio molecular-dynamics simulations, J PHYS-COND, 12(8A), 2000, pp. A189-A194
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
8A
Year of publication
2000
Pages
A189 - A194
Database
ISI
SICI code
0953-8984(20000228)12:8A<A189:MTILMA>2.0.ZU;2-M
Abstract
The structural and electronic properties of liquid RbxTe1-x mixtures (x = 0 .0, 0.2, and 0.5) are studied by ab initio molecular-dynamics simulations. It is shown that the transition from the metallic to the semiconducting sta te induced by adding Rb atoms is reproduced, and that this transition is re lated to the structural change in the Te chain. It is also shown from the c alculated electronic density of states that almost complete charge transfer from Rb to Te occurs in the mixtures. The correlation between the spatial distribution of the transferred charge in the Te chains and the positions o f Rb+ ions is investigated.