Formation of ultra high pure metal thin films by means of a dry process

Citation
Y. Horino et al., Formation of ultra high pure metal thin films by means of a dry process, MATER T JIM, 41(1), 2000, pp. 28-30
Citations number
6
Categorie Soggetti
Metallurgy
Journal title
MATERIALS TRANSACTIONS JIM
ISSN journal
09161821 → ACNP
Volume
41
Issue
1
Year of publication
2000
Pages
28 - 30
Database
ISI
SICI code
0916-1821(200001)41:1<28:FOUHPM>2.0.ZU;2-L
Abstract
Metal thin films or materials surfaces have been playing an important roll in many practical applications such as VLSI technology. It is necessary to know both the bulk and surface properties of these materials for their prac tical applications. To obtain very pure metal films, ion beam technology is the most sophisticated method. Theoretically, it offers isotopically pure thin films (IPTF). The combination or a mass analyzing process and an ultra -high vacuum environment will achieve it. Negative ion beam technology is p roposed for obtaining ultra-high pure thin films.