Formation of high purity films by negative ion beam sputtering using an ultra-high vacuum self-sputtering method

A high purity thin film deposition method has been established, which consi sts of ion beam sputtering with negative ions. The most important character istic of this method is that high purity film synthesis by self-sputtering occurs under an ultra-high vacuum: this results in deposited films that con tain no gas elements such as Ar and Kr, which are found using standard gene ral sputtering apparatus. This is made possible by the negative ion source of the Cs sputter type which needs no discharge gas. In this report the for mation of Si, Si-C and Si-Fe films is demonstrated. The purity of deposited alms is analyzed using the Rutherford backscattering method. The dependenc e of the composition of deposited films of the target materials: Si, C, SiC and Fe, and the beam species and energies of Si- are reported.