Silicon carbide film growth using dual isotopical Si-28(-) and C-12(+) ionspecies

Authors
Tsubouchi, N Chayahara, A Kinomura, A Heck, C Horino, Y
Citation
N. Tsubouchi et al., Silicon carbide film growth using dual isotopical Si-28(-) and C-12(+) ionspecies, MATER T JIM, 41(1), 2000, pp. 34-36
Citations number
19
Categorie Soggetti
Metallurgy
Journal title
MATERIALS TRANSACTIONS JIM
ISSN journal
09161821 → ACNP
Volume
41
Issue
1
Year of publication
2000
Pages
34 - 36
Database
ISI
SICI code
0916-1821(200001)41:1<34:SCFGUD>2.0.ZU;2-B
Abstract
Silicon carbide (SiC) films were prepared by simultaneous irradiation of en ergetic, isotopical mass-separated Si-28(-) and C-12(+) ions. Kinetic energ ies of both ions were 200 eV and deposition temperatures were room temperat ure. 400 and 600 degrees C. investigations of die basic film properties suc h as film composition, impurity, structures, etc. have been undertaken usin g infrared absorption (IR) spectroscopy. Xray photoelectron spectroscopy (X PS) and reflection high-energy electron diffraction (RHEED) measurements. G rowth temperatures of SiC polycrystalline films under irradiation of ions f or film deposition were investigated through the above, measurements.