Crossing point current of electron and proton irradiated power P-i-N diodes

Crossing point current of forward I-V curves (I-Xing) at 25 and 125 degrees C was measured and simulated for 4.5 kV/320 A silicon power P-i-N diode ir radiated by electron, proton and combined electron-proton irradiation. The proton and electron irradiation are shown to decrease the magnitude of I-Xi ng,, which is beneficial for paralleling of diodes under surge conditions. With increasing irradiation dose this effect saturates. High doses of combi ned electron-proton treatment can even lead to an increased magnitude of I- Xing above that of the unirradiated device. To achieve agreement of electro -thermal simulation with experiment, temperature dependence of the capture cross sections sigma(n) and ap of the deep level dominant in condition of h eavy injection had to be taken into account. With the aid of simulation, th e dependencies I-Xing vs, dose are explained. (C) 2000 Elsevier Science Ltd . All rights reserved.