Crossing point current of forward I-V curves (I-Xing) at 25 and 125 degrees
C was measured and simulated for 4.5 kV/320 A silicon power P-i-N diode ir
radiated by electron, proton and combined electron-proton irradiation. The
proton and electron irradiation are shown to decrease the magnitude of I-Xi
ng,, which is beneficial for paralleling of diodes under surge conditions.
With increasing irradiation dose this effect saturates. High doses of combi
ned electron-proton treatment can even lead to an increased magnitude of I-
Xing above that of the unirradiated device. To achieve agreement of electro
-thermal simulation with experiment, temperature dependence of the capture
cross sections sigma(n) and ap of the deep level dominant in condition of h
eavy injection had to be taken into account. With the aid of simulation, th
e dependencies I-Xing vs, dose are explained. (C) 2000 Elsevier Science Ltd
. All rights reserved.