Pm. Igic et Pa. Mawby, Investigation of the thermal stress field in a multilevel aluminium metallisation in VLSI systems, MICROEL REL, 40(3), 2000, pp. 443-450
A residual thermal stress field in a multilevel aluminium metallisation in
VLSI systems is investigated in this paper. Using finite element technique
different structures (interconnecting stud, and metallisation systems conta
ining two, three and six aluminium lines) were modelled. It is confirmed th
at residual stress in these more complex structures significantly differs f
rom the one that residues in single metal line. Finally, it is shown that i
n a multilayer metallisation, the upper aluminium layer relieves stress in
the lower metal lines (and vice versa), adding an extra compressive stress
term to the final tensile stress field. (C) 2000 Elsevier Science Ltd. All
rights reserved.