A new application of acoustic micro imaging: screening MCM-C multilayer defects

Citation
G. Harsanyi et al., A new application of acoustic micro imaging: screening MCM-C multilayer defects, MICROEL REL, 40(3), 2000, pp. 477-484
Citations number
15
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
00262714 → ACNP
Volume
40
Issue
3
Year of publication
2000
Pages
477 - 484
Database
ISI
SICI code
0026-2714(200003)40:3<477:ANAOAM>2.0.ZU;2-Q
Abstract
Acoustic Micro Imaging (AMI) has been successfully applied for detecting so ldering and underfill failures when analyzing surface mounted devices (SMD) , ball-grid array (BGA) and flip-chip mounting, as well as to find internal defects, discontinuities, delaminations, and leakages in plastic packaged ICs. This paper highlights new possibilities of AMI in analyzing multilayer defects in thick-film structures. Studying a model system of multilayer th ick film, it has been found that C-mode Scanning Acoustic Microscopy (C-SAM ) technique seems to be a good candidate for differentiating not only the l ocation surface defects, subsurface bubbles but also short circuit location s, nondestructively. Low Temperature Cofired Ceramic Multichip Module (MCM- C LTCC) interconnection substrates and thick-film multilayer structures are generally built up from relatively high-glass-content dielectric and condu ctive materials, causing one of the most important problems of the technolo gy. In the recent failure analysis investigations, it has been demonstrated that not only rude blistering effect or pinholes can cause short circuit f ailures leading to decreased yields, but ionic migration and dendritic grow th through the melted glass electrolyte can also occur. Short circuit locat ions remain generally undetected in conventional morphology studies of the surface performed with optical and scanning electron microscopy. Thus, they can only be analyzed by destructive methods, after polishing or cross-sect ion preparation, even then the right position can be located only with diff iculties. A special method has been developed by analyzing optical and acou stic multilevel picture for revealing the short circuit locations nondestru ctively. Performing conventional destructive investigation followed by scan ning electron microscopy (SEM) and electron microprobe analysis proved the latter finding. This may be a relevant contribution for future multilayer f ailure analysis processes. (C) 1998 IMAPS. Published by Elsevier Science Lt d. All rights reserved.