GnAs MMIC switch is designed around low-capacitance MESFETs

Authors
Noll, A
Citation
A. Noll, GnAs MMIC switch is designed around low-capacitance MESFETs, MICROWAV RF, 39(3), 2000, pp. 93-94
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROWAVES & RF
ISSN journal
07452993 → ACNP
Volume
39
Issue
3
Year of publication
2000
Pages
93 - 94
Database
ISI
SICI code
0745-2993(200003)39:3<93:GMSIDA>2.0.ZU;2-3
Abstract
SUITABLE for the commercial market, a unique single-pole, eight throw (SP8T ) gallium-arsenide (GaAs), monolithic-microwave-integrated-circuit (MMIC) s witch has been developed. The switch has a I Common arm match when all port s are biased in the isolation state; and a growth port for expansion and in tegration into a higher-order multithrow switch. It is packaged in a plasti c, QSOP-28, surface-mount package.