Impact-energy dependence of hydrogenated Si cluster deposition on Si(111)-(7x7)

The behaviour of hydrogenated Si cluster ions, Si6H13+ deposited on Si(111) -(7x7) was studied as a function of impact energy using scanning tunneling microscopy. Si6H13+ ions with sp(3) bonding were impacted on Si(111) with e nergies between 0.3 and 6 eV per Si atom at room temperature. Clusters depo sited at the lower energies less than or equal to 1 eV/atom remained intact on Si(111). In the intermediate-energy range of 2 and 3 eV/atom, the clust ers were mainly absorbed at the lower terrace of the steps with kinks, show ing that they migrated on Si(111) after a soft landing. Cluster fragmentati on was observed on the surface at the highest energy of 6 eV/atom.