The behaviour of hydrogenated Si cluster ions, Si6H13+ deposited on Si(111)
-(7x7) was studied as a function of impact energy using scanning tunneling
microscopy. Si6H13+ ions with sp(3) bonding were impacted on Si(111) with e
nergies between 0.3 and 6 eV per Si atom at room temperature. Clusters depo
sited at the lower energies less than or equal to 1 eV/atom remained intact
on Si(111). In the intermediate-energy range of 2 and 3 eV/atom, the clust
ers were mainly absorbed at the lower terrace of the steps with kinks, show
ing that they migrated on Si(111) after a soft landing. Cluster fragmentati
on was observed on the surface at the highest energy of 6 eV/atom.