Theoretical comparative study of negatively and positively charged excitons in GaAs/Ga1-xAlxAs semiconductor quantum wells

Authors
Stebe, B Moradi, A Dujardin, F
Citation
B. Stebe et al., Theoretical comparative study of negatively and positively charged excitons in GaAs/Ga1-xAlxAs semiconductor quantum wells, PHYS REV B, 61(11), 2000, pp. 7231-7232
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
11
Year of publication
2000
Pages
7231 - 7232
Database
ISI
SICI code
1098-0121(20000315)61:11<7231:TCSONA>2.0.ZU;2-G
Abstract
We compare: the binding energies of the singlet ground states of negatively and positively charged excitons in a GaAs/Ga1-xAlxAs semiconductor quantum well. We found that the binding energies are very close, contrary to what happens in three-dimensional and two-dimensional semiconductors where the p ositively charged exciton is always more stable than the negatively charged exciton. This result is in agreement with recent experimental observations .