Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

Citation
Xr. Wang et al., Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice, PHYS REV B, 61(11), 2000, pp. 7261-7264
Citations number
39
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
11
Year of publication
2000
Pages
7261 - 7264
Database
ISI
SICI code
1098-0121(20000315)61:11<7261:AOTCSF>2.0.ZU;2-5
Abstract
An anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped GaAs/A1As superlattice in th e transition process from static to dynamic electric field domain formation s. Varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. Inside each volta ge band, the frequency has a strong voltage dependence in the temperature r ange where the averaged current changes with the applied de voltage. This d ependence can be understood in terms of motion of the system along a limit cycle.