Formation of an impurity band and its quantum confinement in heavily dopedGaAs : N

Authors
Zhang, Y Mascarenhas, A Xin, HP Tu, CW
Citation
Y. Zhang et al., Formation of an impurity band and its quantum confinement in heavily dopedGaAs : N, PHYS REV B, 61(11), 2000, pp. 7479-7482
Citations number
27
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICAL REVIEW B
ISSN journal
10980121 → ACNP
Volume
61
Issue
11
Year of publication
2000
Pages
7479 - 7482
Database
ISI
SICI code
1098-0121(20000315)61:11<7479:FOAIBA>2.0.ZU;2-K
Abstract
Quantum confinement in GaAs1-xNx/GaAs quantum wells (0.009<x<0.045) is stud ied using electroreflectance measurements. Formation of an impurity band du e to heavy nitrogen doping and the quantum confinement of an electron belon ging to such an impurity band have been demonstrated. The formation of an i mpurity band results in an unusual variation in the electron effective mass with nitrogen doping.