Cathodoluminescence and Raman scattering in Ga1-xAlxP epitaxial films

Low-temperature cathodoluminescence and Raman scattering of Ga1-xAlxP epita xial layers (0 less than or equal to x less than or equal to 0.8) grown by liquid phase epitaxy on the GaP(100) substrate are studied. The obtained ca thodoluminescence spectra indicate that the dependence of the indirect ener gy gap on the composition parameter x is nonlinear. This nonlinearity can b e described by the parabolic function with the inflection parameter b = 0.1 3. Raman scattering studies show that the phonon spectrum of Ga1-xAlxP cons ists of one (Al-P)-like vibrational mode and three (Ga-P)-like modes. (C) 2 000 MAIK "Nauka/Interperiodica".