Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe

Authors
Bodnaruk, OA Markov, AV Ostapov, SE Rarenko, IM Slonetskii, AF
Citation
Oa. Bodnaruk et al., Bandgap and intrinsic carrier concentration in HgCdMnTe and HgCdZnTe, SEMICONDUCT, 34(4), 2000, pp. 415-417
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
4
Year of publication
2000
Pages
415 - 417
Database
ISI
SICI code
1063-7826(2000)34:4<415:BAICCI>2.0.ZU;2-1
Abstract
The main band parameters of HgCdMnTe and HgCdZnTe quaternary solid solution s were theoretically and experimentally studied. Empirical formulas were pr oposed for the bandgap and intrinsic carrier concentration in a wide range of temperatures and compositions. Calculated values were found to conform w ell to experimental data. (C) 2000 MAIK "Nauka/Interperiodica".