Variation in the defect structure of p-CdTe single crystals at the passageof the laser shock wave

Citation
A. Baidullaeva et al., Variation in the defect structure of p-CdTe single crystals at the passageof the laser shock wave, SEMICONDUCT, 34(4), 2000, pp. 429-432
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
34
Issue
4
Year of publication
2000
Pages
429 - 432
Database
ISI
SICI code
1063-7826(2000)34:4<429:VITDSO>2.0.ZU;2-D
Abstract
Variations in the minority-carrier lifetime, photoluminescence spectra, dar k current and photocurrent temperature dependences of high-resistivity p-Cd Te crystals under the action of the laser shock wave are investigated. It i s shown that the variations in the aforementioned characteristics during th e passage of the shock wave are defined by the generation of the nonequilib rium carriers from deep centers, and, after that, the variations are define d by the formation of intrinsic defects and their subsequent interaction wi th the defects existing in the initial crystals. (C) 2000 MAIK "Nauka/Inter periodica".